型号:

FDC5614P

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET P-CH 60V 3A SSOT-6
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FDC5614P PDF
产品培训模块 High Voltage Switches for Power Processing
产品变化通告 Mold Compound Change 08/April/2008
产品目录绘图 MOSFET SuperSOT-6
标准包装 1
系列 PowerTrench®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 3A
开态Rds(最大)@ Id, Vgs @ 25° C 105 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 24nC @ 10V
输入电容 (Ciss) @ Vds 759pF @ 30V
功率 - 最大 800mW
安装类型 表面贴装
封装/外壳 SOT-23-6 细型,TSOT-23-6
供应商设备封装 6-SSOT
包装 剪切带 (CT)
产品目录页面 1603 (CN2011-ZH PDF)
其它名称 FDC5614PCT
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